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2N6800
2N6800
MOSFETs 2N6800
Microchip Technology
2N6800
--
Diodes, Transistors and Thyristors
MOSFETs
2N6800.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSNot Compliant
Diameter9.39(Max)
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Height4.57(Max)
Product CategoryPower MOSFET
Supplier PackageTO-205AF
Maximum IDSS (uA)25
Typical Fall Time (ns)35(Max)
Typical Rise Time (ns)35(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)800
Typical Gate Charge @ 10V (nC)34.75
Typical Gate Charge @ Vgs (nC)34.75@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)30(Max)
Maximum Drain Source Voltage (V)400
Typical Turn-Off Delay Time (ns)55(Max)
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3
Operating Junction Temperature (°C)-55 to 150
Maximum Drain Source Resistance (MOhm)1100@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 400V 3A 3-Pin TO-39
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