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VS-GB70NA60UF
VS-GB70NA60UF
IGBT Modules VS-GB70NA60UF
Vishay
VS-GB70NA60UF
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count4
AutomotiveNo
TechnologyNPT
PCB changed4
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width25.7(Max)
Package Length38.3(Max)
Supplier PackageSOT-227
Maximum Power Dissipation (mW)447000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)111
Maximum Gate Emitter Leakage Current (uA)0.2
Description
Trans IGBT Module N-CH 600V 111A 447000mW 4-Pin SOT-227
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