Welcome to BEAM! Tel: +86-553-5896615
Language: Help
VS-GB200TH120N
VS-GB200TH120N
IGBT Modules VS-GB200TH120N
Vishay
VS-GB200TH120N
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
MountingScrew
ECCN (US)EAR99
Pin Count7
AutomotiveNo
PCB changed7
Part StatusObsolete
Channel TypeN
ConfigurationDual
Supplier PackageDouble INT-A-PAK
Maximum Power Dissipation (mW)1136000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)360
Maximum Gate Emitter Leakage Current (uA)0.4
Description
Trans IGBT Module N-CH 1200V 360A 1136000mW 7-Pin Double INT-A-PAK
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 10000
$0.95668
Manufacturer: Microchip Technology
Inventory: 0
$0.69448
Manufacturer: Microchip Technology
Inventory: 4000
$2.45335
Manufacturer: STMicroelectronics
Inventory: 5880
$0.67353
Manufacturer: Texas Instruments
Inventory: 3000
$3.36325
Manufacturer: Texas Instruments
Inventory: 2500
$0.14414
Manufacturer: Texas Instruments
Inventory: 3000
$1.31809
Manufacturer: Texas Instruments
Inventory: 6000
$1.06298
Manufacturer: STMicroelectronics
Inventory: 1920
$3.50782
Manufacturer: ADI
Inventory: 0
$1.40183