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NXH100B120H3Q0STG
NXH100B120H3Q0STG
IGBT Modules NXH100B120H3Q0STG
onsemi
NXH100B120H3Q0STG
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTray
AutomotiveNo
Part StatusActive
Channel TypeN
ConfigurationDual
Maximum Power Dissipation (mW)186000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)50
Maximum Gate Emitter Leakage Current (uA)0.8
Typical Collector Emitter Saturation Voltage (V)1.77
Description
Trans IGBT Module N-CH 1200V 50A 186000mW Tray
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