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FZ600R17KE4HOSA1
FZ600R17KE4HOSA1
IGBT Modules FZ600R17KE4HOSA1
Infineon
FZ600R17KE4HOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
Channel TypeN
ConfigurationSingle Dual Emitter
Package Width61.4
Package Height36.5
Package Length106.4
Supplier Package62MM-2
Maximum Power Dissipation (mW)3350000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)840
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.95
Description
Trans IGBT Module N-CH 1700V 840A 3350000mW 4-Pin 62MM-2 Tray
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