Welcome to BEAM! Tel: +86-553-5896615
Language: Help
FZ600R12KE4HOSA1
FZ600R12KE4HOSA1
IGBT Modules FZ600R12KE4HOSA1
Infineon
FZ600R12KE4HOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width61.4
Package Length106.4
Supplier PackageAG-62MM-2
Maximum Power Dissipation (mW)3000000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)600
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.75
Description
Trans IGBT Module N-CH 1200V 600A 3000000mW 4-Pin AG-62MM-2 Tray
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 0
$0.13938
Manufacturer: Microchip Technology
Inventory: 0
$0.70158
Manufacturer: Microchip Technology
Inventory: 0
$0.22169
Manufacturer: STMicroelectronics
Inventory: 0
$0.43955
Manufacturer: Texas Instruments
Inventory: 3000
$3.39766
Manufacturer: Texas Instruments
Inventory: 0
$0.02577
Manufacturer: Texas Instruments
Inventory: 0
$1.10869
Manufacturer: Texas Instruments
Inventory: 6000
$1.07385
Manufacturer: STMicroelectronics
Inventory: 0
$0.14318
Manufacturer: ADI
Inventory: 0
$1.41618