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FZ500R65KE3NOSA1
FZ500R65KE3NOSA1
IGBT Modules FZ500R65KE3NOSA1
Infineon
FZ500R65KE3NOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSNot Compliant
MountingScrew
ECCN (US)3A228.c
PackagingTray
Pin Count7
AutomotiveUnknown
PCB changed7
Part StatusActive
Channel TypeN
ConfigurationDual
Package Width130
Package Height48
Package Length140
Supplier PackageIHV130-6
Maximum Power Dissipation (mW)9600000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)6500
Maximum Continuous Collector Current (A)500
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)3
Description
Trans IGBT Module N-CH 6500V 500A 9600000mW Automotive 7-Pin IHV130-6 Tray
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