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FZ2400R17KE3_B2
FZ2400R17KE3_B2
IGBT Modules FZ2400R17KE3_B2
Infineon
FZ2400R17KE3_B2
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSNot Compliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count9
AutomotiveUnknown
PCB changed9
Part StatusObsolete
Channel TypeN
ConfigurationTriple Common Emitter Common Gate
Package Width140
Package Height38
Package Length190
Supplier PackageIHM190-1
Standard Package NameIHM190
Maximum Power Dissipation (mW)15500000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)3600
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2
Description
Trans IGBT Module N-CH 1700V 3.6KA 15500000mW Automotive 9-Pin IHM190-1 Tray
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