Welcome to BEAM! Tel: +86-553-5896615
Language: Help
IGBT Modules FZ2400R17HP4B29BOSA1
Infineon
FZ2400R17HP4B29BOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTray
AutomotiveNo
Part StatusUnconfirmed
Channel TypeN
ConfigurationTriple
Maximum Power Dissipation (mW)15500000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)2400
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.9
Description
Trans IGBT Module N-CH 1700V 2.4KA 15500000mW Tray
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 0
$0.13938
Manufacturer: Microchip Technology
Inventory: 0
$0.70158
Manufacturer: Microchip Technology
Inventory: 0
$0.22169
Manufacturer: STMicroelectronics
Inventory: 0
$0.43955
Manufacturer: Texas Instruments
Inventory: 3000
$3.39766
Manufacturer: Texas Instruments
Inventory: 0
$0.02577
Manufacturer: Texas Instruments
Inventory: 0
$1.10869
Manufacturer: Texas Instruments
Inventory: 6000
$1.07385
Manufacturer: STMicroelectronics
Inventory: 0
$0.14318
Manufacturer: ADI
Inventory: 0
$1.41618