Welcome to BEAM! Tel: +86-553-5896615
Language: Help
IGBT Modules FZ2400R17HP4B29BOSA1
Infineon
FZ2400R17HP4B29BOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTray
AutomotiveNo
Part StatusUnconfirmed
Channel TypeN
ConfigurationTriple
Maximum Power Dissipation (mW)15500000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)2400
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.9
Description
Trans IGBT Module N-CH 1700V 2.4KA 15500000mW Tray
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 10000
$0.95668
Manufacturer: Microchip Technology
Inventory: 0
$0.69448
Manufacturer: Microchip Technology
Inventory: 4000
$2.45335
Manufacturer: STMicroelectronics
Inventory: 5880
$0.67353
Manufacturer: Texas Instruments
Inventory: 3000
$3.36325
Manufacturer: Texas Instruments
Inventory: 2500
$0.14414
Manufacturer: Texas Instruments
Inventory: 3000
$1.31809
Manufacturer: Texas Instruments
Inventory: 6000
$1.06298
Manufacturer: STMicroelectronics
Inventory: 1920
$3.50782
Manufacturer: ADI
Inventory: 0
$1.40183