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FZ2400R17HP4B28BOSA2
FZ2400R17HP4B28BOSA2
IGBT Modules FZ2400R17HP4B28BOSA2
Infineon
FZ2400R17HP4B28BOSA2
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count9
AutomotiveUnknown
TechnologyTrench
PCB changed9
Part StatusActive
Channel TypeN
ConfigurationTriple
Package Width140
Package Length190
Supplier PackageIHMB190-1
Maximum Power Dissipation (mW)19000000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)2400
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.9
Description
Trans IGBT Module N-CH 1700V 2.4KA 19000000mW Automotive 9-Pin IHMB190-1 Tray
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