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IGBT Modules FZ1800R16KF4_S1
Infineon
FZ1800R16KF4_S1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
MountingScrew
ECCN (US)EAR99
Pin Count9
AutomotiveNo
PCB changed9
Part StatusObsolete
Channel TypeN
ConfigurationTriple Common Emitter Common Gate
Package Width140
Package Height38
Package Length190
Supplier PackageIHM190
Maximum Power Dissipation (mW)11000000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1600
Maximum Continuous Collector Current (A)1800
Maximum Gate Emitter Leakage Current (uA)0.6
Typical Collector Emitter Saturation Voltage (V)3.5
Description
Trans IGBT Module N-CH 1600V 1.8KA 11000000mW 9-Pin IHM190
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