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IGBT Modules FZ1600R17HP4B2BOSA1
Infineon
FZ1600R17HP4B2BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
AutomotiveNo
Channel TypeN
ConfigurationDual
Maximum Power Dissipation (mW)10500
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)1600
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.9
Description
Trans IGBT Module N-CH 1700V 1.6KA 10500mW
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