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FZ1600R17HP4B21BOSA2
FZ1600R17HP4B21BOSA2
IGBT Modules FZ1600R17HP4B21BOSA2
Infineon
FZ1600R17HP4B21BOSA2
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count7
AutomotiveUnknown
TechnologyTrench
PCB changed7
Part StatusActive
Channel TypeN
ConfigurationDual
Package Width130
Package Length140
Supplier PackageIHMB130-1
Maximum Power Dissipation (mW)13000000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)1600
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.9
Description
Trans IGBT Module N-CH 1700V 1.6KA 13000000mW Automotive 7-Pin IHMB130-1 Tray
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