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FZ1200R33KL2CB5NOSA1
FZ1200R33KL2CB5NOSA1
IGBT Modules FZ1200R33KL2CB5NOSA1
Infineon
FZ1200R33KL2CB5NOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
ECCN (US)EAR99
AutomotiveNo
Part StatusObsolete
Channel TypeN
ConfigurationTriple
Maximum Power Dissipation (mW)14500000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)3300
Maximum Continuous Collector Current (A)2300
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)3
Description
Trans IGBT Module N-CH 3300V 2.3KA 14500000mW
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