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IGBT Modules FZ1200R12KF4NOSA1
Infineon
FZ1200R12KF4NOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count7
AutomotiveNo
PCB changed7
Part StatusObsolete
Channel TypeN
ConfigurationDual
Package Width130
Package Length140
Supplier PackageIHM130-2
Maximum Power Dissipation (mW)7800000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)1200
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2.7
Description
Trans IGBT Module N-CH 1200V 1.2KA 7800000mW 7-Pin IHM130-2 Tray
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