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FS800R07A2E3B32BOSA1
FS800R07A2E3B32BOSA1
IGBT Modules FS800R07A2E3B32BOSA1
Infineon
FS800R07A2E3B32BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTray
AutomotiveUnknown
Part StatusNRND
Channel TypeN
ConfigurationHex
Maximum Power Dissipation (mW)1550000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)700
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.3
Description
Trans IGBT Module N-CH 650V 700A 1550000mW Automotive Tray
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