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FS770R08A6P2LBBPSA1
FS770R08A6P2LBBPSA1
IGBT Modules FS770R08A6P2LBBPSA1
Infineon
FS770R08A6P2LBBPSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count33
AutomotiveUnknown
PCB changed33
Part StatusActive
Channel TypeN
ConfigurationHex
Package Width100.5
Package Length154.5
Supplier PackageHYBRIDD-1
Maximum Power Dissipation (mW)654000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)750
Maximum Continuous Collector Current (A)450
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.28
Description
Trans IGBT Module N-CH 750V 450A 654000mW Automotive 33-Pin HYBRIDD-1 Tray
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