Welcome to BEAM! Tel: +86-553-5896615
Language: Help
FS75R12KE3B9BOSA1
FS75R12KE3B9BOSA1
IGBT Modules FS75R12KE3B9BOSA1
Infineon
FS75R12KE3B9BOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count26
AutomotiveNo
PCB changed26
Part StatusNRND
Channel TypeN
ConfigurationHex
Package Width45
Package Height17
Package Length107.5
Supplier PackageECONO2-6
Maximum Power Dissipation (mW)355000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)105
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Module N-CH 1200V 105A 355000mW 26-Pin ECONO2-6 Tray
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 10000
$0.95796
Manufacturer: Microchip Technology
Inventory: 0
$0.69541
Manufacturer: Microchip Technology
Inventory: 4000
$2.45664
Manufacturer: STMicroelectronics
Inventory: 5880
$0.66125
Manufacturer: Texas Instruments
Inventory: 3000
$3.36776
Manufacturer: Texas Instruments
Inventory: 2500
$0.14433
Manufacturer: Texas Instruments
Inventory: 3000
$1.31986
Manufacturer: Texas Instruments
Inventory: 6000
$1.0644
Manufacturer: STMicroelectronics
Inventory: 1920
$3.51252
Manufacturer: ADI
Inventory: 0
$1.40371