Welcome to BEAM! Tel: +86-553-5896615
Language: Help
IGBT Modules FS50R12KT3BPSA1
Infineon
FS50R12KT3BPSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
EU RoHSCompliant with Exemption
ECCN (US)EAR99
Part StatusActive
Maximum Power Dissipation (mW)280000
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)75
Description
IGBT Module and Emitter Controlled High Efficiency Diode
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 0
$0.13926
Manufacturer: Microchip Technology
Inventory: 0
$0.70099
Manufacturer: Microchip Technology
Inventory: 0
$0.2215
Manufacturer: STMicroelectronics
Inventory: 0
$0.43918
Manufacturer: Texas Instruments
Inventory: 3000
$3.39481
Manufacturer: Texas Instruments
Inventory: 0
$0.02575
Manufacturer: Texas Instruments
Inventory: 0
$1.10777
Manufacturer: Texas Instruments
Inventory: 6000
$1.07295
Manufacturer: STMicroelectronics
Inventory: 0
$0.14306
Manufacturer: ADI
Inventory: 0
$1.41499