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FS450R12OE4BOSA1
FS450R12OE4BOSA1
IGBT Modules FS450R12OE4BOSA1
Infineon
FS450R12OE4BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count29
AutomotiveUnknown
PCB changed29
Part StatusActive
Channel TypeN
ConfigurationHex
Package Width152
Package Height17
Package Length164.6
Supplier PackageECONOPP-2
Maximum Power Dissipation (mW)2250000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)660
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.75
Description
Trans IGBT Module N-CH 1200V 660A 2250000mW Automotive 29-Pin ECONOPP-2 Tray
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