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FS3L50R07W2H3FB11BOMA1
FS3L50R07W2H3FB11BOMA1
IGBT Modules FS3L50R07W2H3FB11BOMA1
Infineon
FS3L50R07W2H3FB11BOMA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTray
AutomotiveNo
Part StatusObsolete
Channel TypeN
ConfigurationArray 12
Maximum Power Dissipation (mW)215000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)50
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.45
Description
Trans IGBT Module N-CH 650V 50A 215000mW Tray
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