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FS225R12OE4BOSA1
FS225R12OE4BOSA1
IGBT Modules FS225R12OE4BOSA1
Infineon
FS225R12OE4BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count29
AutomotiveUnknown
TechnologyField Stop|Trench
PCB changed29
Part StatusActive
Channel TypeN
ConfigurationHex
Package Width152
Package Height17
Package Length164
Supplier PackageECONOPP-2
Maximum Power Dissipation (mW)1250000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)350
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.85
Description
Trans IGBT Module N-CH 1200V 350A 1250000mW Automotive 29-Pin ECONOPP-2 Tray
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