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FS200R12N3T7BPSA1
FS200R12N3T7BPSA1
IGBT Modules FS200R12N3T7BPSA1
Infineon
FS200R12N3T7BPSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTray
TechnologyTrench Stop
Part StatusActive
Channel TypeN
ConfigurationHex
Supplier Temperature GradeIndustrial
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)200
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.55
Description
Trans IGBT Module N-CH 1200V 200A Tray
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