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FS200R07A1E3BOSA1
FS200R07A1E3BOSA1
IGBT Modules FS200R07A1E3BOSA1
Infineon
FS200R07A1E3BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count23
AutomotiveYes
PCB changed23
Part StatusObsolete
Channel TypeN
ConfigurationHex
Package Width113
Package Height17
Package Length140
Supplier PackageHYBRID1-1
Maximum Power Dissipation (mW)790000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)250
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.45
Description
Trans IGBT Module N-CH 650V 250A 790000mW Automotive 23-Pin HYBRID1-1 Tray
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