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FS150R12KT4B11BOSA1
FS150R12KT4B11BOSA1
IGBT Modules FS150R12KT4B11BOSA1
Infineon
FS150R12KT4B11BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count35
AutomotiveNo
TechnologyField Stop|Trench
PCB changed35
Part StatusActive
Channel TypeN
ConfigurationHex
Package Width62
Package Height17
Package Length122
Supplier PackageECONO3-4
Maximum Power Dissipation (mW)750000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)150
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.75
Description
Trans IGBT Module N-CH 1200V 150A 750000mW 35-Pin ECONO3-4 Tray
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