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FS150R12KE3GBOSA1
FS150R12KE3GBOSA1
IGBT Modules FS150R12KE3GBOSA1
Infineon
FS150R12KE3GBOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count29
AutomotiveUnknown
PCB changed29
Part StatusNRND
Channel TypeN
ConfigurationHex
Package Width150
Package Height17
Package Length162
Supplier PackageECONOPP-1
Maximum Power Dissipation (mW)695000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)200
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Module N-CH 1200V 200A 695000mW Automotive 29-Pin ECONOPP-1 Tray
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