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FS150R06KE3BOSA1
FS150R06KE3BOSA1
IGBT Modules FS150R06KE3BOSA1
Infineon
FS150R06KE3BOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count35
AutomotiveNo
PCB changed35
Part StatusActive
Channel TypeN
ConfigurationHex
Package Width62
Package Height17
Package Length122
Supplier PackageECONO3-4
Maximum Power Dissipation (mW)430
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)150
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.45
Description
Trans IGBT Module N-CH 600V 150A 430000mW 35-Pin ECONO3-4 Tray
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