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FP75R07N2E4B11BOSA1
FP75R07N2E4B11BOSA1
IGBT Modules FP75R07N2E4B11BOSA1
Infineon
FP75R07N2E4B11BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTray
AutomotiveNo
Part StatusObsolete
Channel TypeN
ConfigurationHex
Maximum Power Dissipation (mW)250000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)75
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.55
Description
Trans IGBT Module N-CH 650V 75A 250000mW Tray
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