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FP50R12KT4GB15BOSA1
FP50R12KT4GB15BOSA1
IGBT Modules FP50R12KT4GB15BOSA1
Infineon
FP50R12KT4GB15BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count35
AutomotiveNo
PCB changed35
Part StatusUnconfirmed
Channel TypeN
ConfigurationArray 7
Package Width62
Package Height17
Package Length122
Supplier PackageECONO3-3
Maximum Power Dissipation (mW)280000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)50
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.85
Description
Trans IGBT Module N-CH 1200V 50A 280000mW 35-Pin ECONO3-3 Tray
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