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FP35R12KT4BOSA1
FP35R12KT4BOSA1
IGBT Modules FP35R12KT4BOSA1
Infineon
FP35R12KT4BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count23
AutomotiveNo
PCB changed23
Part StatusUnconfirmed
Channel TypeN
ConfigurationHex
Package Width45
Package Height17
Package Length107.5
Supplier PackageECONO2-4
Maximum Power Dissipation (mW)210000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)35
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.85
Description
Trans IGBT Module N-CH 1200V 35A 210000mW 23-Pin ECONO2-4 Tray
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