Welcome to BEAM! Tel: +86-553-5896615
Language: Help
FP15R12KS4CBOSA1
FP15R12KS4CBOSA1
IGBT Modules FP15R12KS4CBOSA1
Infineon
FP15R12KS4CBOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTray
AutomotiveNo
Part StatusLTB
Channel TypeN
ConfigurationHex
Maximum Power Dissipation (mW)180000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)30
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)3.2
Description
Trans IGBT Module N-CH 1200V 30A 180000mW Tray
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 0
$0.13926
Manufacturer: Microchip Technology
Inventory: 0
$0.70099
Manufacturer: Microchip Technology
Inventory: 0
$0.2215
Manufacturer: STMicroelectronics
Inventory: 0
$0.43918
Manufacturer: Texas Instruments
Inventory: 3000
$3.39481
Manufacturer: Texas Instruments
Inventory: 0
$0.02575
Manufacturer: Texas Instruments
Inventory: 0
$1.10777
Manufacturer: Texas Instruments
Inventory: 6000
$1.07295
Manufacturer: STMicroelectronics
Inventory: 0
$0.14306
Manufacturer: ADI
Inventory: 0
$1.41499