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FF900R12IP4DBOSA2
FF900R12IP4DBOSA2
IGBT Modules FF900R12IP4DBOSA2
Infineon
FF900R12IP4DBOSA2
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTray
AutomotiveUnknown
Part StatusActive
Channel TypeN
ConfigurationDual
Maximum Power Dissipation (mW)5100000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)900
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Module N-CH 1200V 900A 5100000mW Automotive Tray
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