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FF600R12ME4EB11BOSA1
FF600R12ME4EB11BOSA1
IGBT Modules FF600R12ME4EB11BOSA1
Infineon
FF600R12ME4EB11BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count13
AutomotiveNo
PCB changed13
Part StatusNRND
Channel TypeN
ConfigurationDual
Package Width62.5
Package Height17
Package Length152
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)600
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.75
Description
Trans IGBT Module N-CH 1200V 600A 13-Pin Tray
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