Welcome to BEAM! Tel: +86-553-5896615
Language: Help
FF600R12KE3NOSA1
FF600R12KE3NOSA1
IGBT Modules FF600R12KE3NOSA1
Infineon
FF600R12KE3NOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count10
AutomotiveNo
PCB changed10
Part StatusObsolete
Channel TypeN
ConfigurationDual
Package Width130
Package Height38
Package Length140
Supplier PackageIHM130-2
Maximum Power Dissipation (mW)2800
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)850
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Module N-CH 1200V 850A 2800mW 10-Pin IHM130-2 Tray
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 10000
$0.95938
Manufacturer: Microchip Technology
Inventory: 0
$0.69644
Manufacturer: Microchip Technology
Inventory: 4000
$2.46027
Manufacturer: STMicroelectronics
Inventory: 5880
$0.76916
Manufacturer: Texas Instruments
Inventory: 3000
$3.37274
Manufacturer: Texas Instruments
Inventory: 2500
$0.14455
Manufacturer: Texas Instruments
Inventory: 3000
$1.32181
Manufacturer: Texas Instruments
Inventory: 6000
$1.06598
Manufacturer: STMicroelectronics
Inventory: 1920
$3.51772
Manufacturer: ADI
Inventory: 0
$1.40579