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FF450R12ME3BOSA1
FF450R12ME3BOSA1
IGBT Modules FF450R12ME3BOSA1
Infineon
FF450R12ME3BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count11
AutomotiveNo
PCB changed11
Part StatusNRND
Channel TypeN
ConfigurationDual
Package Width62
Package Height17
Package Length152
Supplier PackageECONOD-3
Maximum Power Dissipation (mW)2100
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)600
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Module N-CH 1200V 600A 2100mW 11-Pin ECONOD-3 Tray
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