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FF225R12ME4BOSA1
FF225R12ME4BOSA1
IGBT Modules FF225R12ME4BOSA1
Infineon
FF225R12ME4BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count11
AutomotiveNo
PCB changed11
Part StatusActive
Channel TypeN
ConfigurationDual
Package Width62
Package Height17
Package Length152
Supplier PackageECONOD-3
Standard Package NameAG-ECONOD-3
Maximum Power Dissipation (mW)1050000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)320
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.85
Description
Trans IGBT Module N-CH 1200V 320A 1050000mW 11-Pin ECONOD-3 Tray
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