Welcome to BEAM! Tel: +86-553-5896615
Language: Help
FF200R12KS4HOSA1
FF200R12KS4HOSA1
IGBT Modules FF200R12KS4HOSA1
Infineon
FF200R12KS4HOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count7
AutomotiveUnknown
PCB changed7
Part StatusActive
Channel TypeN
ConfigurationDual
Package Width61.4
Package Height29
Package Length106.4
Supplier Package62MM-1
Maximum Power Dissipation (mW)1400000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)275
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)3.2
Description
Trans IGBT Module N-CH 1200V 275A 1400000mW Automotive 7-Pin 62MM-1 Tray
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 10000
$0.95668
Manufacturer: Microchip Technology
Inventory: 0
$0.69448
Manufacturer: Microchip Technology
Inventory: 4000
$2.45335
Manufacturer: STMicroelectronics
Inventory: 5880
$0.67353
Manufacturer: Texas Instruments
Inventory: 3000
$3.36325
Manufacturer: Texas Instruments
Inventory: 2500
$0.14414
Manufacturer: Texas Instruments
Inventory: 3000
$1.31809
Manufacturer: Texas Instruments
Inventory: 6000
$1.06298
Manufacturer: STMicroelectronics
Inventory: 1920
$3.50782
Manufacturer: ADI
Inventory: 0
$1.40183