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FF150R12YT3BOMA1
FF150R12YT3BOMA1
IGBT Modules FF150R12YT3BOMA1
Infineon
FF150R12YT3BOMA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count9
AutomotiveNo
PCB changed9
Part StatusNRND
Channel TypeN
ConfigurationDual
Package Width45.6
Package Height17
Package Length55.9
Supplier PackageEASY2-1
Maximum Power Dissipation (mW)625000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)200
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Module N-CH 1200V 200A 625000mW 9-Pin EASY2-1 Tray
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