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FF1000R17IE4DB2BOSA1
FF1000R17IE4DB2BOSA1
IGBT Modules FF1000R17IE4DB2BOSA1
Infineon
FF1000R17IE4DB2BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTray
AutomotiveNo
Part StatusActive
Channel TypeN
ConfigurationDual
Maximum Power Dissipation (mW)6250000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)1390
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2
Description
Trans IGBT Module N-CH 1700V 1.39KA 6250000mW Tray
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