Welcome to BEAM! Tel: +86-553-5896615
Language: Help
F475R12KS4B11BOSA1
F475R12KS4B11BOSA1
IGBT Modules F475R12KS4B11BOSA1
Infineon
F475R12KS4B11BOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count24
AutomotiveNo
PCB changed24
Part StatusNRND
Channel TypeN
ConfigurationQuad
Package Width45
Package Height17
Package Length107.5
Supplier PackageECONO2-6
Standard Package NameAG-ECONO2-6
Maximum Power Dissipation (mW)500000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)100
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)3.2
Description
Trans IGBT Module N-CH 1200V 100A 500000mW 24-Pin ECONO2-6 Tray
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 0
$0.13976
Manufacturer: Microchip Technology
Inventory: 0
$0.70349
Manufacturer: Microchip Technology
Inventory: 0
$0.22229
Manufacturer: STMicroelectronics
Inventory: 0
$0.44075
Manufacturer: Texas Instruments
Inventory: 3000
$3.40692
Manufacturer: Texas Instruments
Inventory: 0
$0.02584
Manufacturer: Texas Instruments
Inventory: 0
$1.11171
Manufacturer: Texas Instruments
Inventory: 6000
$1.07678
Manufacturer: STMicroelectronics
Inventory: 1920
$3.55336
Manufacturer: ADI
Inventory: 0
$1.42003