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F475R07W2H3B51BOMA1
F475R07W2H3B51BOMA1
IGBT Modules F475R07W2H3B51BOMA1
Infineon
F475R07W2H3B51BOMA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTray
AutomotiveNo
Part StatusObsolete
Channel TypeN
ConfigurationQuade
Maximum Power Dissipation (mW)250000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)75
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.35
Description
Trans IGBT Module N-CH 650V 75A 250000mW Tray
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