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F450R07W2H3B51BOMA1
F450R07W2H3B51BOMA1
IGBT Modules F450R07W2H3B51BOMA1
Infineon
F450R07W2H3B51BOMA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count18
AutomotiveNo
PCB changed18
Part StatusObsolete
Channel TypeN
ConfigurationQuade
Package Width56.7
Package Height12
Package Length62.8
Supplier PackageEASY2B-2
Maximum Power Dissipation (mW)215000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)65
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.35
Description
Trans IGBT Module N-CH 650V 65A 215000mW 18-Pin EASY2B-2 Tray
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