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F3L150R07W2E3_B11
F3L150R07W2E3_B11
IGBT Modules F3L150R07W2E3_B11
Infineon
F3L150R07W2E3_B11
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count14
AutomotiveNo
PCB changed14
Part StatusUnconfirmed
Channel TypeN
ConfigurationQuad
Package Width48
Package Height12
Package Length56.7
Supplier PackageEASY2B-2
Maximum Power Dissipation (mW)335000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)150
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.45
Description
Trans IGBT Module N-CH 650V 150A 335000mW 14-Pin EASY2B-2 Tray
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