Welcome to BEAM! Tel: +86-553-5896615
Language: Help
F1225R12KT4GBOSA1
F1225R12KT4GBOSA1
IGBT Modules F1225R12KT4GBOSA1
Infineon
F1225R12KT4GBOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count38
AutomotiveNo
PCB changed38
Part StatusActive
Channel TypeN
ConfigurationArray 12
Package Width62
Package Height17
Package Length122
Supplier PackageECONO3-4
Maximum Power Dissipation (mW)160000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)25
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.85
Description
Trans IGBT Module N-CH 1200V 25A 160000mW 38-Pin ECONO3-4 Tray
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 10000
$0.95938
Manufacturer: Microchip Technology
Inventory: 0
$0.69644
Manufacturer: Microchip Technology
Inventory: 4000
$2.46027
Manufacturer: STMicroelectronics
Inventory: 5880
$0.76916
Manufacturer: Texas Instruments
Inventory: 3000
$3.37274
Manufacturer: Texas Instruments
Inventory: 2500
$0.14455
Manufacturer: Texas Instruments
Inventory: 3000
$1.32181
Manufacturer: Texas Instruments
Inventory: 6000
$1.06598
Manufacturer: STMicroelectronics
Inventory: 1920
$3.51772
Manufacturer: ADI
Inventory: 0
$1.40579