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DF150R12RT4HOSA1
DF150R12RT4HOSA1
IGBT Modules DF150R12RT4HOSA1
Infineon
DF150R12RT4HOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count7
AutomotiveUnknown
PCB changed7
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width34
Package Height30.5
Package Length94
Supplier Package34MM-1
Maximum Power Dissipation (mW)790000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)150
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.75
Description
Trans IGBT Module N-CH 1200V 150A 790000mW Automotive 7-Pin 34MM-1 Tray
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