Welcome to BEAM! Tel: +86-553-5896615
Language: Help
DF1000R17IE4DB2BOSA1
DF1000R17IE4DB2BOSA1
IGBT Modules DF1000R17IE4DB2BOSA1
Infineon
DF1000R17IE4DB2BOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count12
AutomotiveUnknown
PCB changed12
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width89
Package Height38
Package Length250
Supplier PackagePRIME3-1
Maximum Power Dissipation (mW)6250
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)1390
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2
Description
Trans IGBT Module N-CH 1700V 1.39KA 6250mW Automotive 12-Pin PRIME3-1 Tray
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 0
$0.13767
Manufacturer: Microchip Technology
Inventory: 0
$0.69296
Manufacturer: Microchip Technology
Inventory: 0
$0.21896
Manufacturer: STMicroelectronics
Inventory: 0
$0.43415
Manufacturer: Texas Instruments
Inventory: 3000
$3.3559
Manufacturer: Texas Instruments
Inventory: 0
$0.02546
Manufacturer: Texas Instruments
Inventory: 0
$1.31521
Manufacturer: Texas Instruments
Inventory: 6000
$1.06065
Manufacturer: STMicroelectronics
Inventory: 1920
$3.50015
Manufacturer: ADI
Inventory: 0
$1.39877