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DF1000R17IE4BOSA1
DF1000R17IE4BOSA1
IGBT Modules DF1000R17IE4BOSA1
Infineon
DF1000R17IE4BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count12
AutomotiveUnknown
PCB changed12
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width89
Package Height38
Package Length250
Supplier PackagePRIME3-1
Maximum Power Dissipation (mW)6250
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)1390
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2
Description
Trans IGBT Module N-CH 1700V 1.39KA 6250mW Automotive 12-Pin PRIME3-1 Tray
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