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BSM50GX120DN2BOSA1
BSM50GX120DN2BOSA1
IGBT Modules BSM50GX120DN2BOSA1
Infineon
BSM50GX120DN2BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
MountingScrew
ECCN (US)EAR99
Pin Count24
PCB changed24
Part StatusLTB
Channel TypeN
ConfigurationHex
Package Width62
Package Height17
Package Length122
Maximum Power Dissipation (mW)360000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)80
Maximum Gate Emitter Leakage Current (uA)0.3
Typical Collector Emitter Saturation Voltage (V)2.2
Description
Trans IGBT Module N-CH 1200V 80A 360000mW 24-Pin
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