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IGBT Modules BSM50GD120DN2G
Infineon
BSM50GD120DN2G
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSSupplier Unconfirmed
MountingScrew
ECCN (US)EAR99
Pin Count21
AutomotiveNo
PCB changed21
Part StatusObsolete
Channel TypeN
ConfigurationHex
Package Width62
Package Height17
Package Length122
Supplier PackageECONO3-1
Standard Package NameEconoPACK 3A
Maximum Power Dissipation (mW)400000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)78
Maximum Gate Emitter Leakage Current (uA)0.2
Typical Collector Emitter Saturation Voltage (V)2.5
Description
Trans IGBT Module N-CH 1200V 78A 400000mW 21-Pin ECONO3-1
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