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BSM35GD120DN2E3224BOSA1
BSM35GD120DN2E3224BOSA1
IGBT Modules BSM35GD120DN2E3224BOSA1
Infineon
BSM35GD120DN2E3224BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
MountingScrew
ECCN (US)EAR99
Pin Count17
AutomotiveNo
PCB changed17
Part StatusUnconfirmed
Channel TypeN
ConfigurationHex
Package Width45
Package Height17
Package Length107.5
Supplier PackageECONO2-2
Maximum Power Dissipation (mW)280000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)50
Maximum Gate Emitter Leakage Current (uA)0.15
Typical Collector Emitter Saturation Voltage (V)2.7
Description
Trans IGBT Module N-CH 1200V 50A 280000mW 17-Pin ECONO2-2
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